PART |
Description |
Maker |
GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
SPM3215 |
GaAs MMICs
|
SANYO
|
BGA420 |
Silicon MMICs - 20dB LNA, 0...3GHz, 50Ohm, SOT343
|
Infineon
|
BGB540 |
Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SFH4511 Q62703Q5557 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
CMY91 Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) 砷化镓微波单片集成电路(砷化镓混频器,集成中频放大器的移动通信 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc. Sirenza Microdevices, Inc.
|
Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器 Ternary PIN Photodiode in TO-Package with Integrated Optics From old datasheet system
|
SIEMENS A G Infineon Technologies AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|